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| AM1011-075 RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS .REFRACTORY/ .EMI .10: .LOW .I .OVERLAY .METAL/ .P DESCRIPTION G OLD METALLIZATION T TER SITE BALLASTED 1 VSWR CAPABILITY THERMAL RESISTANCE NPUT/OUTPUT MATCHING GEOMETRY C ERAMIC HERMETIC PACKAGE OUT = 75 W MIN. WITH 9.2 dB GAIN .400 x .400 2LFL (S036) hermetically sealed ORDER CODE AM1011-075 BRANDING 1011-75 PIN CONNECTION The AM1011-075 device is a high power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and is capable of withstanding 10:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The AM1011-075 is supplied in the AMPACTM Hermetic M etal/Ceramic package with i nternal Input/Output matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25 C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC 100C) 175 5.4 55 250 - 65 to +200 W A V C C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.86 C/W *Applies only to rated RF amplifier operation September 1992 1/4 AM1011-075 ELECTRICAL SPECIFICATIONS (T case = 25 C) STATIC Symbol Test Conditions Valu e Min. Typ. Max. Unit BVCBO BVEBO BVCER ICES hFE IC = 10mA IE = 4mA IC = 20mA VCE = 50V VCE = 5V IE = 0mA IC = 0mA RBE = 10 IC = 1mA 65 3.5 65 -- 10 -- -- -- -- -- -- -- -- 6 -- V V V mA -- DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT c GP Note: f = 1090MHz f = 1090MHz f = 1090MHz = = 32Sec 2% PIN = 9W Peak PIN = 9W Peak PIN = 9W Peak VCC = 50V VCC = 50V VCC = 50V 75 48 9.2 84 56 9.7 -- -- -- W % dB Pul se Widt h Duty Cycle TYPICAL PERFORMANCE TYPICAL POWER OUTPUTOUTPUT & TYPICAL POWER & COLLECTOR EFFICIENCY EFFICIENCY COLLECTOR vs POWER INPUT vs POWER INPUT 120 P O W E R O U T P U T W A T T S 110 100 90 80 70 60 50 50 40 30 20 4 5 6 7 8 9 10 11 12 13 14 15 16 45 % 65 80 75 POUT 70 C 60 C O L L E C T O R E F F . 55 40 POWER INPUT (WATTS) 2/4 AM1011-075 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE Z IN TYPICAL COLLECTOR LOAD IMPEDANCE Z CL Z IN L H H L ZCL FREQ. L = 1030 MHz H = 1090 MHz ZIN () 7.0 + j 3.0 11.0 + j 1.5 ZCL () 12.5 - j 4.5 13.0 - j 3.0 PIN = 9.0 W VCC = 50 V Normalized to 50 ohms TEST CIRCUIT All dimensions are in inches. Substrate material: .025 thick AI2O3 C1 C2 C3 : 0.8--8.0 pF Johanson Gigatrim Capacitor : 100 pF Chip Capacitor : 1500 pF Filtercon Feedthru C4 : 1 F, Ceramic Capacitor C5 : 100 F, Electrolytic Capacitor RFC 1: Au Plated Ni Strap 0.280 Long x 0.035 Wide x 0.005 Thick RFC 2: #26 Wire, 4 Turn 1/16 I.D. 3/4 AM1011-075 PACKAGE MECHANICAL DATA Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4 |
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